Quantum-Well Semiconductor Lasers
Identifieur interne : 001F02 ( Main/Exploration ); précédent : 001F01; suivant : 001F03Quantum-Well Semiconductor Lasers
Auteurs : Govind P. Agrawal [États-Unis] ; Niloy K. Dutta [États-Unis]Source :
Abstract
Abstract: A double-heterostructure laser consists of an active layer sandwiched between two higher-gap cladding layers. The active-layer thickness is typically in the range of 0.1–0.3 µm. In the last few years, double-heterostructure lasers with an active-layer thickness of ~ 10 nm have been fabricated. The carrier (electron or hole) motion normal to the active layer in these structures is restricted. As a result, the kinetic energy of the carriers moving in that direction is quantized into discrete energy levels similar to the well-known quantum-mechanical problem of the one-dimensional potential well, and hence these lasers are called quantum-well lasers.
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DOI: 10.1007/978-1-4613-0481-4_9
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<record><TEI wicri:istexFullTextTei="biblStruct"><teiHeader><fileDesc><titleStmt><title xml:lang="en">Quantum-Well Semiconductor Lasers</title><author><name sortKey="Agrawal, Govind P" sort="Agrawal, Govind P" uniqKey="Agrawal G" first="Govind P." last="Agrawal">Govind P. Agrawal</name></author><author><name sortKey="Dutta, Niloy K" sort="Dutta, Niloy K" uniqKey="Dutta N" first="Niloy K." last="Dutta">Niloy K. Dutta</name></author></titleStmt><publicationStmt><idno type="wicri:source">ISTEX</idno><idno type="RBID">ISTEX:08365F736EC68BF2FF61BA29B7C673A59F103105</idno><date when="1993" year="1993">1993</date><idno type="doi">10.1007/978-1-4613-0481-4_9</idno><idno type="url">https://api.istex.fr/ark:/67375/HCB-0LPQC8R7-6/fulltext.pdf</idno><idno type="wicri:Area/Istex/Corpus">001567</idno><idno type="wicri:explorRef" wicri:stream="Istex" wicri:step="Corpus" wicri:corpus="ISTEX">001567</idno><idno type="wicri:Area/Istex/Curation">001567</idno><idno type="wicri:Area/Istex/Checkpoint">000C66</idno><idno type="wicri:explorRef" wicri:stream="Istex" wicri:step="Checkpoint">000C66</idno><idno type="wicri:Area/Main/Merge">001F91</idno><idno type="wicri:Area/Main/Curation">001F02</idno><idno type="wicri:Area/Main/Exploration">001F02</idno></publicationStmt><sourceDesc><biblStruct><analytic><title level="a" type="main" xml:lang="en">Quantum-Well Semiconductor Lasers</title><author><name sortKey="Agrawal, Govind P" sort="Agrawal, Govind P" uniqKey="Agrawal G" first="Govind P." last="Agrawal">Govind P. Agrawal</name><affiliation wicri:level="2"><country xml:lang="fr">États-Unis</country><wicri:regionArea>The Institute of Optics, University of Rochester, Rochester, New York</wicri:regionArea><placeName><region type="state">État de New York</region></placeName></affiliation></author><author><name sortKey="Dutta, Niloy K" sort="Dutta, Niloy K" uniqKey="Dutta N" first="Niloy K." last="Dutta">Niloy K. Dutta</name><affiliation wicri:level="2"><country xml:lang="fr">États-Unis</country><wicri:regionArea>AT&T Bell Laboratories, Murray Hill, New Jersey</wicri:regionArea><placeName><region type="state">New Jersey</region></placeName></affiliation></author></analytic><monogr></monogr></biblStruct></sourceDesc></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Abstract: A double-heterostructure laser consists of an active layer sandwiched between two higher-gap cladding layers. The active-layer thickness is typically in the range of 0.1–0.3 µm. In the last few years, double-heterostructure lasers with an active-layer thickness of ~ 10 nm have been fabricated. The carrier (electron or hole) motion normal to the active layer in these structures is restricted. As a result, the kinetic energy of the carriers moving in that direction is quantized into discrete energy levels similar to the well-known quantum-mechanical problem of the one-dimensional potential well, and hence these lasers are called quantum-well lasers.</div></front></TEI><affiliations><list><country><li>États-Unis</li></country><region><li>New Jersey</li><li>État de New York</li></region></list><tree><country name="États-Unis"><region name="État de New York"><name sortKey="Agrawal, Govind P" sort="Agrawal, Govind P" uniqKey="Agrawal G" first="Govind P." last="Agrawal">Govind P. Agrawal</name></region><name sortKey="Dutta, Niloy K" sort="Dutta, Niloy K" uniqKey="Dutta N" first="Niloy K." last="Dutta">Niloy K. Dutta</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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